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IXTQ50N20P Datasheet

The IXTQ50N20P is a Power MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberIXTQ50N20P
ManufacturerIXYS
Overview PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA50N20P IXTP50N20P IXTQ50N20P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions.
* International standard packages
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect Advantages
* Easy to mount
* Space savings
* High power density © 2008 IXYS CORPORATION, All rights reserved DS99156F(07/08) Symbol Test Conditions (TJ = 25°C, u.
Part NumberIXTQ50N20P
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 60mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot .
*Drain Source Voltage- : VDSS= 200V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 60mΩ(Max)
*Fast Switching
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Switch-Mode and Resonant-Mode Power Supplies
*DC-DC Converters .