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IXTY4N65X2 Datasheet

The IXTY4N65X2 is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberIXTY4N65X2
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 850mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% Avalanche Tested ·Minimum Lot-to-Lot var.
*Static drain-source on-resistance: RDS(on) ≤ 850mΩ@VGS=10V
*Fully characterized avalanche voltage and current
*100% Avalanche Tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATION
*Switched mode power supplies
*DC-DC converters
*ABSOLUTE MAXIMUM R.
Part NumberIXTY4N65X2
DescriptionPower MOSFET
ManufacturerIXYS
Overview Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTY4N65X2 IXTA4N65X2 IXTP4N65X2 VDSS = ID25 = RDS(on) 650V 4A 850m TO-252 (IXTY) Symbol VDSS VDGR VGSS VGSM .
* International Standard Packages
* Low RDS(ON) and QG
* Avalanche Rated
* Low Package Inductance Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) .