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J110 Datasheet

The J110 is a N-Channel Switch. Download the datasheet PDF and view key features and specifications below.

Part NumberJ110
ManufacturerFairchild Semiconductor
Overview J108/J109/J110/MMBFJ108 J108/J109/J110/MMBFJ108 N-Channel Switch • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from Process 58. 3. GSS IGSS VGS(off) Gate-Source Breakdwon Voltage Gate Reverse Current Gate-Source Cutoff Voltage IG = -10µA, VDS = 0 VGS = -15V, VDS = 0 VGS = -15V, VDS = 0, TA = 100°C VDS = 15V, ID = 10nA 108 109 110 On Characteristics IDSS Zero-Gate Voltage Drain Current * VDS = 15V, IGS = 0 108 109 110 .
Part NumberJ110
DescriptionJFET - General Purpose N-Channel
Manufactureronsemi
Overview J110 JFET − General Purpose N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for general purpose audio amplifiers, analog switch. http://onsemi.com 1 DRAIN
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* N−Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance High DC Input Resistance Low RDS(on) < 18 W Fast Switching td(on) + tr = 8.0 ns (Typ) Low Noise en = 6.0 nV/√Hz @ 10 Hz (Typ) Pb−Free Packages are Available* 3 GATE 2 SOU.
Part NumberJ110
DescriptionN-Channel JFETs
ManufacturerVishay
Overview The J/SST108 series is designed with high-performance analog switching applications in mind. It features low on-resistance, good off-isolation, and fast switching. The SST108 series is comprised of su. D Low On-Resistance: J108 <8 W D Fast Switching—tON: 4 ns D Low Leakage: 20 pA D Low Capacitance: 11 pF D Low Insertion Loss BENEFITS D Low Error Voltage D High-Speed Analog Circuit Performance D Negligible “Off-Error” Excellent Accuracy D Good Frequency Response D Eliminates Additional Buffering .
Part NumberJ110
Descriptionn-channel JFET
ManufacturerSiliconix
Overview n-channel JFETs designed for • • • • Analog Switches • Choppers • Commutators • Low Noise Audio Amplifiers ABSOLUTE MAXIMUM RATINGS (25°C) H Siliconix Performance Curves NIP See Sedion 4 BENEFITS • L. ) G s D GDS 0 D0 Bottom View Characteristic 12'51 'GSS Gate Reverse Current (Note 1) VOS(of1) Gate-Source Cutoff Voltage 1'3: BVGSS I-T I~~ lOSS 17 ' 0 (011) 'OS(on! Gate-Source Breakdown Voltage Dram Saturation Current INote 2) Dram Cutoff Current (Note 1) Drain-Source ON Reslstane 11 7 Cdg(o.