| Part Number | JAN4N23A Datasheet |
|---|---|
| Manufacturer | Micropac Industries |
| Overview |
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22A, 4N23A and 4N24A can be tested to customer specifi.
* * * * * * Collector is electrically isolated from the case. Overall current gain *1.5 typical (4N24A) Base lead provided for conventional transistor biasing Rugged package High gain, high voltage transistor +1kV electrical isolation Applications: * * * * * Eliminate ground loops Level shifting . |