Part Number	JAN4N24A Datasheet
Manufacturer	Micropac Industries
Overview	Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22A, 4N23A and 4N24A can be tested to customer specifi. * * * * * * Collector is electrically isolated from the case. Overall current gain *1.5 typical (4N24A) Base lead provided for conventional transistor biasing Rugged package High gain, high voltage transistor +1kV electrical isolation Applications: * * * * * Eliminate ground loops Level shifting .