| Part Number | K12A65D Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | MOSFETs Silicon N-Channel MOS (π-MOS) TK12A65D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) (2) High forward transfer admitta. (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 6.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK12A65D 1: Gate (G) 2. |
K12A65D Datasheet and Specifications PDF
The K12A65D is a TK12A65D.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | K12A65D Datasheet |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | VBsemi |
| Overview |
K12A65D-VB
K12A65D-VB Datasheet
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Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650
VGS = 10 V 109
0.17.
* Low figure-of-merit (FOM) Ron x Qg * Low input capacitance (Ciss) * Reduced switching and conduction losses * Ultra low gate charge (Qg) * Avalanche energy rated (UIS) Available D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source. |