KSB1015 Datasheet

The KSB1015 is a PNP Transistor.

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Part NumberKSB1015
ManufacturerInchange Semiconductor
Overview ·Low Collector Saturation Voltage- : VCE(sat)= -1.7 V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type KSD1406 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performanc. er Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -5V ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE-1 DC Current Gain IC= -0.5A; VCE= -5V .
Part NumberKSB1015
DescriptionPNP Epitaxial Silicon Transistor
ManufacturerFairchild Semiconductor
Overview KSB1015 KSB1015 Low Frequency Power Amplifier • Low Collector Emitter Saturation Voltage • Complement to KSD1406 1 TO-220F 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute M. = 0 VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 3A IC = - 3A, IB = - 0.3A VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 0.5A VCB = - 10V, f = 1MHz VCC = - 30V, IC = - 1A IB1 = -IB2 = -0.2A RL = 30Ω 60 20 - 0.5 - 0.7 9 150 0.4 1.7 0.5 Min. - 60 Typ. Max. - 100 - 100 200 -1 -1 V V MHz pF µs µs µs Units V .