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KSD1408 Datasheet

The KSD1408 is a Silicon NPN Power Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberKSD1408
ManufacturerInchange Semiconductor
Overview ·Low Collector Saturation Voltage : VCE(sat)= 1.5V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Complement to Type KSB1017 ·100% avalanche tested ·Minimum Lot-to-Lot varia. tage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 5V ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A; VCE= 5V hFE-2 DC Current Gain I.
Part NumberKSD1408
DescriptionNPN Transistor
ManufacturerFairchild Semiconductor
Overview KSD1408 KSD1408 Power Amplifier Applications • Complement to KSB1017 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise note. f = 1MHz 40 15 50 0.45 1 8 90 1.5 1.5 V V MHz pF Min. 80 Typ. Max. 30 100 240 Units V µA µA hFE1 Classification Classification hFE1 R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD1408 Typical Characteristics 4.0 1000 I B= A A 0m 60mA 0.