| Part Number | KSD1691 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Collector Current -IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 0.3V(Max.)@ IC= 2A ·Complement to Type KSB1151 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device per. PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 2A; IB= 0.2A VCB= 50V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 0.1A; VCE= 1V hFE-2 DC Curren. |
KSD1691 Datasheet and Specifications PDF
The KSD1691 is a Silicon NPN Power Transistor.
Key Specifications
| Package | TO-126 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 11 mm |
| Length | 8 mm |
| Width | 3.25 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | KSD1691 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview |
KSD1691
KSD1691
Feature
• Low Collector-Emtter Saturation Voltage & Large Collector Current • High Power Dissipation: PC = 1.3W (Ta=25°C) • Complementary to KSB1151
1
TO-126 2.Collector 3.Base
1. .
* Low Collector-Emtter Saturation Voltage & Large Collector Current * High Power Dissipation: PC = 1.3W (Ta=25°C) * Complementary to KSB1151 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IC. |