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KSD362 Datasheet

The KSD362 is a Silicon NPN Power Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberKSD362
ManufacturerInchange Semiconductor
Overview ·Collector-Base Breakdown Voltage: V(BR)CBO= 150V(Min) ·Collector Current- IC= 5A ·Collector Power Dissipation: PC= 40W@ TC= 25℃ APPLICATIONS ·Designed for B/W TV horizontal deflection output applica. Breakdown Voltage IC= 1mA ; IE= 0 150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 8 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V ICBO Collector Cutoff Current VCB= 100V; IE= .
Part NumberKSD362
DescriptionNPN (B/W TV HORIZONTAL DEFLECTION OUTPUT)
ManufacturerSamsung Semiconductor
Overview . .
Part NumberKSD362
DescriptionB/W TV Horizontal Deflection Output
ManufacturerFairchild Semiconductor
Overview KSD362 KSD362 B/W TV Horizontal Deflection Output • Collector-Base Voltage : VCBO=150V • Collector Current : IC=5A • Collector Dissipation : PC=40W(TC=25°C) TO-220 2.Collector 3.Emitter 1 1.Base N. = 0 VCE = 5V, IC = 5A IC = 5A, IB = 0.5A IC = 5A, IB = 0.5A VCE = 5V, IC = 0.5A 10 20 Min. 150 70 8 20 140 1 1.5 V V MHz Typ. Max. Units V V V µA hFE Classification Classification hFE N 20 ~ 50 R 40 ~ 80 O 70 ~ 140 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD362 Typical.