KSD5011 Datasheet and Specifications PDF

The KSD5011 is a NPN Transistor.

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Part NumberKSD5011 Datasheet
ManufacturerSamsung Semiconductor
Overview . .
Part NumberKSD5011 Datasheet
DescriptionSilicon NPN Power Transistor
ManufacturerInchange Semiconductor
Overview ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATIN. ICBO Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE DC Current Gain IC= 0.5A ; VCE= 5V fT Current-Gain
*Bandwidth Product VECF C-E Diode Forward Voltage tf Fall Time IC= 0.5A; VCE= 10V IF= 3.5A IC= 3A , IB1= 0.8A ; IB2= -1.6A RL= 66.7Ω; VCC= 200V.