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KSD985 Datasheet

The KSD985 is a Silicon NPN Power Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberKSD985
ManufacturerInchange Semiconductor
Overview ·Collector–Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min.) ·DC Current Gain- : hFE = 2000(Min) @ IC= 1A ·Low Collector Saturation Voltage APPLICATIONS ·They are suitable for use to operate from IC . ONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 1mA ICBO Collector Cutoff Current VCB= 60V; IE= 0 ICER Collector Cutoff Current VCE=60V;RBE=51Ω;TC=125℃ ICEX Collector Cutoff Current IEBO Emitter C.
Part NumberKSD985
DescriptionAudio Frequency Power Amplifier
ManufacturerFairchild Semiconductor
Overview KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Rating. @ TC = 125°C VEB = 5V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A IC = 1A, IB = 1mA IC = 1A, IB = 1mA VCC = 50V, IC = 1A IB1 = - IB2 = 1mA RL = 50Ω 0.5 1.0 1.0 1000 2000 Min. Typ. Max. 10 1.0 10 1.0 1.0 30000 1.5 2.0 V V µs µs µs Units µA mA µA mA mA Emitter Cut-off Current *DC Current Gain *Coll.