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KSD986 Datasheet

The KSD986 is a Silicon NPN Power Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberKSD986
ManufacturerInchange Semiconductor
Overview ·High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A ·Minimum Lot-to. licon NPN Darlington Power Transistor KSD986 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 1mA 1.5 V 2.0 V ICB.
Part NumberKSD986
DescriptionAudio Frequency Power Amplifier
ManufacturerFairchild Semiconductor
Overview KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Rating. @ TC = 125°C VEB = 5V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A IC = 1A, IB = 1mA IC = 1A, IB = 1mA VCC = 50V, IC = 1A IB1 = - IB2 = 1mA RL = 50Ω 0.5 1.0 1.0 1000 2000 Min. Typ. Max. 10 1.0 10 1.0 1.0 30000 1.5 2.0 V V µs µs µs Units µA mA µA mA mA Emitter Cut-off Current *DC Current Gain *Coll.