KSP55 Datasheet and Specifications PDF

The KSP55 is a PNP Epitaxial Silicon Transistor.

Key Specifications

PackageTO-92-3
Mount TypeThrough Hole
Pins3
Max Frequency50 MHz
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberKSP55 Datasheet
Manufactureronsemi
Overview 98AON13879G Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−92 3.
* Collector
*Emitter Voltage: VCEO = KSP55:
*60 V
* Collector Dissipation: PC (Max.) = 625 mW
* Complement to KSP05/06
* This is a Pb
*Free Device ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Value Unit VCBO Collector
*Base Voltage
*60 V VCEO Collector
*Emitte.
Part NumberKSP55 Datasheet
DescriptionAmplifier Transistor
ManufacturerFairchild Semiconductor
Overview KSP55/56 KSP55/56 Amplifier Transistor • Collector-Emitter Voltage: VCEO=KSP55: 60V KSP56: 80V • Collector Power Dissipation: PC (max) =625mW • Complement to KSP05/06 1 TO-92 1. Emitter 2. Base 3.. =0 VCB= -80V, IE=0 VCE= -60V, IB=0 VCE= -1V, IC= -10mA VCE= -1V, IC= -100mA IC= -100mA, IB= -10mA VCE= -1V, IC= -100mA VCE= -2V, IC= -10mA f=100MHz 50 50 50 -0.25 -1.2 V V MHz -0.1 -0.1 -0.1 µA µA µA Test Condition IC= -1mA, IB=0 IE= -100µA, IC=0 Min. -60 -80 -4 Max. Units V V BVEBO ICBO * Pulse T.

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