| Part Number | KTA1659 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·High Collector-Emitter Breakdown Voltage
VCEO= -160V(Min) ·Complement to Type KTC4370 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for h.
ter On Voltage
IC= -500mA; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -100mA; VCE= -5V
* hFE Classifications O Y 70-140 120-240 KTA1659 MIN TYP. MAX UNIT -160 V -1.5 V -1.0 V -1.0 μA -1.0 μA 70 . |
KTA1659 Datasheet and Specifications PDF
The KTA1659 is a Silicon PNP Power Transistors.
| Part Number | KTA1659 Datasheet |
|---|---|
| Description | EPITAXIAL PLANAR PNP TRANSISTOR |
| Manufacturer | KEC |
| Overview | SEMICONDUCTOR TECHNICAL DATA KTA1659/A EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES High Transition Frequency : fT=100MHz(Typ.). Complementary to KTC4370/A. MAXIMUM RATING (Ta. High Transition Frequency : fT=100MHz(Typ.). Complementary to KTC4370/A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage KTA1659 KTA1659A Collector-Emitter Voltage KTA1659 KTA1659A Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Juncti. |