KTB1369 Datasheet

The KTB1369 is a Silicon PNP Power Transistors.

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Part NumberKTB1369
ManufacturerInchange Semiconductor
Overview ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -0.5A, IB= -50mA) ·Complement to Type KTD2061 ·Minimum Lot-to-Lot vari. specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -5V ICBO Collector Cutoff Current VCB= -200V; IE= 0 IEBO Emitter Cutoff .
Part NumberKTB1369
DescriptionEPITAXIAL PLANAR PNP TRANSISTOR
ManufacturerKEC
Overview SEMICONDUCTOR TECHNICAL DATA KTB1369 EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION TV, MONITOR VERTICAL OUTPUT APPLICATION DRIVER STAGE APPLICATION COROR TV CLASS B SOUND OUTPUT APPLICATI. High Breakdown Voltage : VCEO=-180V(Min.) High Transition Frequency : fT=100MHz(Typ.) High Current : IC(max)=-2A. Complementary to KTD2061. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dis.