The KTB2510 is a Silicon PNP Power Transistors.
| Part Number | KTB2510 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max) @IC= -7A ·High DC Current Gain : hFE= 5000(Min) @ IC= -7A, VCE= -4V ·Compleme. . |
| Part Number | KTB2510 Datasheet |
|---|---|
| Description | EPITAXIAL PLANAR PNP TRANSISTOR |
| Manufacturer | KEC |
| Overview | SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER DARLINGTON APPLICATION. FEATURES Complementary to KTD1510 Recommended for 60W Audio Amplifier Output Stage. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Co. Complementary to KTD1510 Recommended for 60W Audio Amplifier Output Stage. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range . |
| Seller | Inventory | Price Breaks | Buy |
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| Win Source | 65 | 65+ : 0.9009 USD 160+ : 0.7392 USD 245+ : 0.7161 USD 335+ : 0.693 USD |
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| SHENGYU ELECTRONICS | 7222 | 1+ : 0.6125 USD 10+ : 0.6003 USD 100+ : 0.58 USD 1000+ : 0.56 USD |
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