| Part Number | KTC2800 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Collector-Emitter Breakdown Voltage VCEO= 160V(Min) ·Complement to Type KTA1700 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for hig. Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA VBE(on) Base-Emitter On Voltage IC= 500mA; VCE= 5V ICBO Collector Cutoff Current VCB= 160V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE DC Current Gain IC= 100mA ; VCE= 5V COB Output Capa. |
KTC2800 Datasheet and Specifications PDF
The KTC2800 is a Silicon NPN Power Transistors.
Key Specifications
| Part Number | KTC2800 Datasheet |
|---|---|
| Description | EPITAXIAL PLANAR NPN TRANSISTOR |
| Manufacturer | KEC |
| Overview | SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION. FEATURES ᴌHigh Transition Frequency : fT=100MHz(Typ.). ᴌComplementary to KTA1700. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Bas. ᴌHigh Transition Frequency : fT=100MHz(Typ.). ᴌComplementary to KTA1700. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current VCBO VCEO VEBO IC IB Collector Power Dissipation Ta=25ᴱ Tc=25ᴱ PC Junct. |