| Part Number | LL103B Datasheet |
|---|---|
| Manufacturer | General Semiconductor |
| Overview |
LL103A THRU LL103C
Schottky Diodes
MiniMELF
FEATURES ♦ For general purpose applications. ♦ The LL103A, B, C is a metal-on-silicon
Schottky barrier device which is protected by a PN junction guard rin.
* For general purpose applications. * The LL103A, B, C is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. ∅ .063 (1.6) .055 (1.4) Cathode Mark * The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasin. |
LL103B Datasheet and Specifications PDF
The LL103B is a Schottky Diodes.
Key Specifications
| Mount Type | Surface Mount |
|---|---|
| Pins | 2 |
| Height | 1.6 mm |
| Length | 3.7 mm |
| Width | 1.6 mm |
| Max Operating Temp | 125 °C |
| Min Operating Temp | -65 °C |
| Part Number | LL103B Datasheet |
|---|---|
| Description | Silicon Schottky Barrier Diode for general purpose applicationsbb |
| Manufacturer | SEMTECH |
| Overview | . . |
| Part Number | LL103B Datasheet |
|---|---|
| Description | Surface Mount Si-Schottky Barrier Diodes |
| Manufacturer | Diotec Semiconductor |
| Overview |
LL 103A ... LL 103C Silizium-Schottky-Dioden für die Oberflächenmontage 0.2 A 20…40 V SOD 80 DO-213AA 0.05 g see page 18 siehe Seite 18
Surface Mount Si-Schottky Barrier Diodes Nominal current Nennst.
j = 25/C VR = 0 V
TA = 25 /C TA = 25/C VR = VRRM f = 1 MHz
Ptot IFSM IR Ctot trr Tj TS RthA
400 mW1) 15 A < 5 :A typ. 50 pF typ. 10 ns +125/C - 55 *+175/C < 300 K/W 1) IF = 200 mA through/über IR = 200 A to/auf IR = 20 mA Junction temperature * Sperrschichttemperatur Storage temperature * Lage. |
| Part Number | LL103B Datasheet |
|---|---|
| Description | Small Signal Schottky Diodes |
| Manufacturer | LGE |
| Overview | LL103A-LL103C Small Signal Schottky Diodes Features For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop. For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for fast switching and low logic level applications . |