| Part Number | LS5909 Datasheet |
|---|---|
| Manufacturer | LINEAR SYSTEMS |
| Overview | FEATURES LOW DRIFT ULTRA LOW LEAKAGE IΔVGS1-2/ΔT│=5µV/°C max. IG=150fA TYP. LOW PINCHOFF VP=2V TYP. ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Tempe. LOW DRIFT ULTRA LOW LEAKAGE IΔVGS1-2/ΔT│=5µV/°C max. IG=150fA TYP. LOW PINCHOFF VP=2V TYP. ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature -55 to +150°C Operating Junction Temperature -55 to +150°C Maximum Voltage and Current for Each Tr. |
LS5909 Datasheet and Specifications PDF
The LS5909 is a DUAL N-CHANNEL JFET AMPLIFIER.
| Part Number | LS5909 Datasheet |
|---|---|
| Description | DUAL N-CHANNEL JFET |
| Manufacturer | Micross |
| Overview |
LS5909 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
The LS5909 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted.
LOW DRIFT ULTRA LOW LEAKAGE LOW PINCHOFF ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) | VGS1‐2 / T| = 5µV/°C TYP. IG = 150fA TYP. Vp = 2V TYP.
LS5909 Benefits:
* * * * Tight Tracking Good matching Ultra Low Leakage Low Drift Maximum Temperatures Storage Temperature ‐65°C to. |