MBR20035CTR Datasheet
MBR20035CTR Datasheet (Naina Semiconductor)
Naina Semiconductor
Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20020CT thru MBR20040CTR Silicon Schottky Diode, 200A TWIN .
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* Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR20020CT thru MBR20040CTR
Silicon Schottky Diode, 200A
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC.
MBR20035CTR Datasheet (America Semiconductor)
America Semiconductor
Free Datasheet Free Datasheet .
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MBR20035CTR Datasheet (GeneSiC)
GeneSiC
Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 to 40 V VRRM • Not ESD Sensitive MBR20020CT thru MBR20040CTR VRRM = 20 V - 40 V IF(AV) = 200 A Twin Tower Package Maximu.
* High Surge Capability
* Types from 20 to 40 V VRRM
* Not ESD Sensitive
MBR20020CT thru MBR20040CTR
VRRM = 20 V - 40 V IF(AV) = 200 A
Twin Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR20020CT(R) MBR20.