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MBR20080CT Datasheet

The MBR20080CT is a SCHOTTKY RECTIFIER. Download the datasheet PDF and view key features and specifications below.

Part NumberMBR20080CT
ManufacturerInternational Rectifier
Overview Features Units A This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junct. Units A This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, and r.
Part NumberMBR20080CT
Description200 Amp Rectifier 20 to 100 Volts Schottky Barrier
ManufacturerMicro Commercial Components
Overview MCC Features • • • •   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MBR20020CT THRU MBR200100CT 200 Amp Schottky Barrier Rectifier.
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*   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MBR20020CT THRU MBR200100CT 200 Amp Schottky Barrier Rectifier 20 to 100 Volts FULL PACK Metal of siliconrectifier, majonty carrier conducton Guard ring for transient protect.
Part NumberMBR20080CT
DescriptionSilicon Power Schottky Diode
ManufacturerAmerica Semiconductor
Overview Free Datasheet http:// Free Datasheet http:// . .
Part NumberMBR20080CT
Description(MBR20045CT - MBR200100CTR) Schottky Power Diode
ManufacturerNaina Semiconductor
Overview Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20045CT thru MBR200100CTR Silicon Schottky Diode, 200A TWIN.
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* Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20045CT thru MBR200100CTR Silicon Schottky Diode, 200A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage D.

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