MBR20200CT Datasheet

The MBR20200CT is a Dual Schottky Rectifier.

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Part NumberMBR20200CT
Manufactureronsemi
Overview Switch‐mode Power Rectifier Dual Schottky Rectifier MBR20200CT Features and Benefits  Low Forward Voltage  Low Power Loss/High Efficiency  High Surge Capacity  175C Operating Junction Temperature. and Benefits
* Low Forward Voltage
* Low Power Loss/High Efficiency
* High Surge Capacity
* 175C Operating Junction Temperature
* 20 A Total (10 A Per Diode Leg)
* This is a Pb-Free Device* Applications
* Power Supply
* Output Rectification
* Power Management
* Instrumentation Mechanical Characteri.
Part NumberMBR20200CT
DescriptionSCHOTTKY RECTIFIER
ManufacturerSANGDEST MICROELECTRONICS
Overview SANGDEST MICROELECTRONICS MBR20200CT MBRB20200CT MBR20200CT-1 Technical Data Green Products Data Sheet N0763, Rev. - MBR20200CT/MBRB20200CT/MBR20200CT-1 SCHOTTKY RECTIFIER Applications: • Swit.
* 175 °C TJ operation
* Center tap configuration
* Low forward voltage drop
* High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
* High frequency operation
* Guard ring for enhanced ruggedness and long term reliability
* This is a Pb
* Free D.
Part NumberMBR20200CT
DescriptionSchottky Barrier Rectifier
ManufacturerInchange Semiconductor
Overview Schottky Barrier Rectifier FEATURES ·Guard -Ring for Stress Protection ·Low Forward Voltage ·High Operating Junction Temperature ·Low Power Loss/High Efficiency ·High surge capability ·100% avalanche.
*Guard -Ring for Stress Protection
*Low Forward Voltage
*High Operating Junction Temperature
*Low Power Loss/High Efficiency
*High surge capability
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS
*Case: Epoxy, Mol.
Part NumberMBR20200CT
Description20A High Power Schottky Barrier Rectifiers
ManufacturerChip Integration Technology
Overview MBR2040CT THRU MBR20200CT 20A High Power Schottky Barrier Rectifiers ■ Features ■ Outline • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capabi.
* Outline
* Low power loss, high efficiency.
* High current capability, low forward voltage drop.
* High surge capability.
* Guardring for overvoltage protection.
* Ultra high-speed switching.
* Silicon epitaxial planar chip, metal silicon junction.
* Suffix "G" indicates Halogen-free part, ex.MBR.