MBR30035CT Datasheet and Specifications PDF

The MBR30035CT is a Silicon Power Schottky Diode.

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Part NumberMBR30035CT Datasheet
ManufacturerGeneSiC
Overview Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive MBR30020CT thru MBR30040CTR VRRM = 20 V - 40 V IF(AV) = 300 A Twin Tower Package Maxi.
* High Surge Capability
* Types from 20 V to 40 V VRRM
* Not ESD Sensitive MBR30020CT thru MBR30040CTR VRRM = 20 V - 40 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR30020CT(R) MBR.
Part NumberMBR30035CT Datasheet
Description300 Amp Rectifier 20 to 100 Volts Schottky Barrier
ManufacturerMicro Commercial Components
Overview MCC Features • • • •   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MBR30020CT THRU MBR300100CT 300 Amp Schottky Barrier Rectifier.
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*   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MBR30020CT THRU MBR300100CT 300 Amp Schottky Barrier Rectifier 20 to 100 Volts FULL PACK Metal of siliconrectifier, majonty carrier conducton Guard ring for transient protect.
Part NumberMBR30035CT Datasheet
DescriptionSchottky Power Diode
ManufacturerNaina Semiconductor
Overview Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR30020CT thru MBR30040CTR Silicon Schottky Diode, 300A TWIN .
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* Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR30020CT thru MBR30040CTR Silicon Schottky Diode, 300A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC.
Part NumberMBR30035CT Datasheet
DescriptionSilicon Power Schottky Diode
ManufacturerAmerica Semiconductor
Overview Free Datasheet Free Datasheet . .