| Part Number | MBR360 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
Axial Lead Rectifiers
MBR350, MBR360
These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with o.
epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low *voltage, high *frequency inverters, free wheeling diodes, and polarity protection diodes. Features * Extremely Low vF * Low Power Loss/High Efficiency * Highly Stable Oxide Passivated . |