MBR60060CT Datasheet and Specifications PDF

The MBR60060CT is a Schottky Power Diode.

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Part NumberMBR60060CT Datasheet
ManufacturerNaina Semiconductor
Overview Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR60045CT thru MBR600100CTR Silicon Schottky Diode, 600A TWIN.
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* Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR60045CT thru MBR600100CTR Silicon Schottky Diode, 600A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage D.
Part NumberMBR60060CT Datasheet
DescriptionSilicon Power Schottky Diode
ManufacturerGeneSiC
Overview Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBR60045CT thru MBR600100CTR VRRM = 45 V - 100 V IF(AV) = 600 A Twin Tower Package M.
* High Surge Capability
* Types from 45 V to 100 V VRRM
* Not ESD Sensitive MBR60045CT thru MBR600100CTR VRRM = 45 V - 100 V IF(AV) = 600 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR60045CT(R) .
Part NumberMBR60060CT Datasheet
DescriptionSilicon Power Schottky Diode
ManufacturerAmerica Semiconductor
Overview Free Datasheet Free Datasheet . .

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