MBRF10100CT Datasheet and Specifications PDF

The MBRF10100CT is a Dual Common Cathode Schottky Rectifier.

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Part NumberMBRF10100CT Datasheet
ManufacturerTaiwan Semiconductor
Overview G Green compound AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) AVERAGE FORWARD A CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 15 10 5 RESISTIVE OR INDUC. - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: ITO-22.
Part NumberMBRF10100CT Datasheet
DescriptionSCHOTTKY BARRIER RECTIFIER
ManufacturerKD
Overview MBRF1020CT THRU MBRF10100CT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 10.0 Ampere FEATURES ● Plastic package has Underwriters Laboratory Flammability Classificati.
* Plastic package has Underwriters Laboratory Flammability Classification 94V-0
* Dual rectifier construction, positive center tap
* Metal silicon junction, majority carrier conduction
* Low power loss, high efficiency
* Guardring for overvoltage protection
* For use in low voltage, high frequency i.
Part NumberMBRF10100CT Datasheet
Description10 Amp Schottky Barrier Rectifier
ManufacturerMicro Commercial Components
Overview MCC Features • • • • • MBRF1020CT   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# THRU  MBRF10100CT 10 Amp Schottky Low.
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* MBRF1020CT   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# THRU  MBRF10100CT 10 Amp Schottky Low Power Loss High Efficiency Low Forward Voltage , High Current Capability High surge capacity Case : ITO-220AB Fu.
Part NumberMBRF10100CT Datasheet
DescriptionDual High Voltage Trench MOS Barrier Schottky Rectifier
ManufacturerVishay
Overview MBRF1090CT, MBRF10100CT Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier TMBS® ITO-220AB PIN 1 PIN 3 123 PIN 2 FEATURES • Trench MOS Schottky t.
* Trench MOS Schottky technology
* Lower power losses, high efficiency
* Low forward voltage drop
* High forward surge capability
* High frequency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definitions of compliance please see TY.