MCR12DSM Datasheet and Specifications PDF

MCR12DSM, MCR12DSN Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applicati.

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* Small Size Passivated Die for Reliability and Uniformity Low Level Triggering and Holding Characteristics Epoxy Meets UL 94 V
*0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb
*Free Packages are Available SCRs 12 AMPERES RMS 600
* 800.

The MCR12DSM and MCR12DSN devices are designed for high- volume, low-cost industrial and consumer applications such as motor control, process control, temperature, light and speed control, Capacitive .

* ESD Ratings: Human Body Model
* 3B > 8000 V, Machine Model
* C > 400 V
* UL Recognized compound meeting flammability rating V-0
* Low-level triggering and holding characteristics
* Passivated die surface for reliability and uniformity
* Small size Product Summary Characteristic IT(RMS) VDRM/ VRR.

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR12DSM/D Silicon Controlled Rectifiers Reverse Blocking Thyristors • Small Size • Passivated Die for Reliability and Uniformity • Low .

5°C unless otherwise noted) Rating Peak Repetitive Off
*State Voltage (1) Peak Repetitive Reverse Voltage (TJ =
*40 to 110°C, RGK = 1.0 KW) On
*State RMS Current (All Conduction Angles; TC = 75°C) Average On
*State Current (All Conduction Angles; TC = 75°C) Peak Non
*Repetitive Surge Current (One Half C.