MCR310 Datasheet and Specifications PDF

The MCR310 is a Silicon Controlled Rectifiers.

Key Specifications

PackageTO-220AB
Datasheet4U Logo
Part NumberMCR310 Datasheet
Manufactureronsemi
Overview MCR310 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Designed for industrial and consumer applications such as temperature, light and s. Voltage (t p 10 ms) Peak Gate Current (t p 10 ms) Peak Gate Power (t p 10 ms) Average Gate Power Operating Junction Temperature Range Storage Temperature Range Mounting Torque Symbol VDRM or VRRM 400 600 800 IT(RMS) ITSM I2t VGM IGM PGM PG(AV) TJ Tstg
* 10 100 40 ±5 1 5 0.75
*40 to +110
*40 to +150.
Part NumberMCR310 Datasheet
DescriptionThyristors
ManufacturerLittelfuse
Overview Designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. Features.
* Center Gate Geometry for Uniform Current Density
* All Diffused and GlassPassivated Junctions for Parameter Uniformity and Stability
* Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
* Low Trigger Currents, 200 µA Maximum for Direct Driving .
Part NumberMCR310 Datasheet
DescriptionSCRs
ManufacturerHAOPIN
Overview Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to. Blocking voltage to 800 V On-state RMS current to 10 A Ultra low gate trigger current SYMBOL PARAMETER VDRM IT RMS Repetitive peak off-state voltages (Tj=-40 to 110oC 1/2Sine Wave,RGK=1K On-state rms current ITSM Peak non-repetitive surge current MCR310-6 MCR310-8 MCR310-10 Value 400 600 800 .
Part NumberMCR310 Datasheet
DescriptionSilicon Controlled Rectifiers
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR310/D Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . designed for industrial and consumer applications such a. urrent (1/2 Cycle, 60 Hz, TJ =
*40 to 110°C) Circuit Fusing (t = 8.3 ms) Peak Gate Voltage (t Symbol VDRM or VRRM 50 100 200 400 600 800 IT(RMS) ITSM I2t VGM IGM PGM PG(AV) TJ Tstg
* 10 100 40 ±5 1 5 0.75
*40 to +110
*40 to +150 8 Amps Amps A2s Volts Amp Watts Watt °C °C in.-lb. Value Unit Volts K .

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