| Part Number | MD1802FX |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | · High Voltage · Low base-drive requirements · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC. CS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(sus) Collector-emitter sustaining Voltage IC= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB=1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 5.0A; IB=1.25A ICBO Collector Cutoff Current VCB= 15. |
MD1802FX Datasheet
The MD1802FX is a Silicon NPN Power Transistor.
| Part Number | MD1802FX |
|---|---|
| Description | High voltage NPN Power transistor |
| Manufacturer | STMicroelectronics |
| Overview |
The MD1802FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated.
* * * * * * * State-of-the-art technology: * Diffused collector “Enhanced generation” More stable performances versus operating temperature variation Low base-drive requirements Tighter hFE range at operating collector current High ruggedness Fully insulated power package U.L. compliant In complian. |