| Part Number | ME4950 |
|---|---|
| Manufacturer | VBsemi |
| Overview |
ME4950-VB
ME4950-VB Datasheet Dual N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.063 at VGS = 10 V 100
0.084 at VGS = 6 V
ID (A)d 5.8 4.8
Qg (Typ.) 9 nC
SO.
* Halogen-free According to IEC 61249-2-21 Available * Trench Power MOSFET * 100 % UIS Tested APPLICATIONS * High Frequency Boost Converter * LED Backlight for LCD TV D1 D2 G1 S1 N-Channel MOSFET G2 S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symb. |
ME4950 Datasheet
The ME4950 is a Dual N-Channel 100V MOSFET.
| Part Number | ME4950 |
|---|---|
| Description | Dual N-Channel MOSFET |
| Manufacturer | Matsuki |
| Overview |
The ME4950 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to.
* RDS(ON)≦115mΩ@VGS=10V * RDS(ON)≦137mΩ@VGS=4.5V * Super high density cell design for extremely low RDS(ON) * Exceptional on-resistance and maximum DC current capability APPLICATIONS * Power Management in Note book * Portable Equipment * Battery Powered System * DC/DC Converter * Load Switch * LCD D. |