MGSF1N02ELT1 Datasheet and Specifications PDF

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MGSF1N02ELT1/D Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistor Part of the GreenLine™ Portfolio of devi.

ng Drain
*to
*Source Voltage Gate
*to
*Source Voltage
* Continuous Drain Current
* Continuous @ TA = 25°C Drain Current
* Pulsed Drain Current (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Thermal Resistance
* Junction
*to
*Ambient Maximum Lead Temperature for So.

MGSF1N02ELT1 Preferred Device Power MOSFET 750 mAmps, 20 Volts N−Channel SOT−23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices id.

* Low RDS(on) Provides Higher Efficiency and Extends Battery Life
* Miniature SOT
*23 Surface Mount Package Saves Board Space
* Pb
*Free Package is Available MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Drain
*to
*Source Voltage VDSS 20 Gate
*to
*Source Voltage
* Continuou.