MGSF1N02LT3 Datasheet
MGSF1N02LT3 Datasheet (Motorola Semiconductor)
Motorola Semiconductor
MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MGSF1N02LT1/D MGSF1N02LT1 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors P.
rce Voltage Gate
*to
*Source Voltage
* Continuous Drain Current
* Continuous @ TA = 25°C Drain Current
* Pulsed Drain Current (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Thermal Resistance
* Junction
*to
*Ambient Maximum Lead Temperature for Soldering Purpose.
MGSF1N02LT3 Datasheet (onsemi)
onsemi
MGSF1N02LT1 Preferred Device Power MOSFET 750 mAmps, 20 Volts N–Channel SOT–23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices id.
ue 20 ± 20 750 2000 400
* 55 to 150 300 260 Unit Vdc Vdc 1 mA mW °C °C/W °C
1 2 3
750 mAMPS 20 VOLTS RDS(on) = 90 mW
N
*Channel 3
2
MARKING DIAGRAM
SOT
*23 CASE 318 STYLE 21
N2 W
W
= Work Week
PIN ASSIGNMENT
Drain
3
1
2
Gate
Source
ORDERING INFORMATION
Device MGSF1N02LT.