Part Number	MJ10003
Manufacturer	Inchange Semiconductor
Overview	·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for hig. ISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.17 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS.