| Part Number | MJ1001 Datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ1000/D Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier appli. ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ. |
MJ1001 Datasheet PDF
The MJ1001 is a Medium-Power Complementary Silicon Transistors.
| Part Number | MJ1001 Datasheet |
|---|---|
| Description | (MJ1000 / MJ1001) Complementary Power Darlingtons |
| Manufacturer | Comset Semiconductors |
| Overview |
NPN MJ1000 – MJ1001 COMPLEMENTARY POWER DARLINGTONS
The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are .
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NPN MJ1000 * MJ1001 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO ICEO IEBO Ratings Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current Emitter Cutoff Current Test Condition(s) IC=100 mA, IB=0 VCE=30 V, IB=0 VCE=40 V, IB=. |
| Part Number | MJ1001 Datasheet |
|---|---|
| Description | (MJ1000 / MJ1001) SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ900/901 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PI. A ; VCE=3V MJ1000 ICER Collector cut-off current MJ1001 MJ1000 ICEO Collector cut-off current MJ1001 IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain VCE=40V; IB=0 VEB=5V; IC=0 IC=3A ; VCE=3V IC=4A ; VCE=3V VCE=60V; RBE=1.0k@ TC=150 VCE=80V; RBE=1.0k@ TC=150 VCE=30V; IB=0 80 . |