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MJ11031 Datasheet

The MJ11031 is a Power Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberMJ11031
ManufacturerDIGITRON
Overview MJ11028, MJ11030, MJ11032 – NPN MJ11029, MJ11031, MJ11033 – PNP High-reliability discrete products and engineering services since 1977 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS FEATURES  .
* Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
* Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Ratings Collector-emitter voltage Collector-base voltage Emitter-base voltage .
Part NumberMJ11031
DescriptionCOMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
Manufactureronsemi
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11028/D High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier appl. ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ.
Part NumberMJ11031
DescriptionCOMPLEMENTARY DARLINGTON POWER TRANSISTOR
ManufacturerSeme LAB
Overview NPN PNP MJ11029 MJ11031 MJ11033 LAB MECHANICAL DATA Dimensions in mm (inches) 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) SEME MJ11028 MJ11030 MJ11032 COMPLEMENTARY DARLINGTON POWER TRANSISTOR FEATURES. 30 .15 (1.187 ) 1 1 6 .89 (0.665) 2
* HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 400 Min 0@ IC = 50A
* CURVES TO 100A (Pulsed)
* DIODE PROTECTION TO RATED IC
* MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE
  – EMITTER SHUNT RESISTOR 4.1 (0.161 +0.4
  –0 +0.016
  –0 ) 4.0 ± 0.1 (0.157 ± 0.00.
Part NumberMJ11031
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -90V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A ·Complement to the NPN MJ11030 ·Minimum Lot-to-Lot variations fo. csemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -25A; IB= -250mA.

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