| Part Number | MJ15003 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
MJ15003 (NPN), MJ15004 (PNP)
Complementary Silicon Power Transistors
The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications.
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* High Safe Operating Area * For Low Distortion Complementary Designs * High DC Current Gain * These Devices are Pb *Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector *Emitter Voltage Collector *Base Voltage Emitter *Base Voltage Collector Current * Continuous Base Cu. |
MJ15003 Datasheet and Specifications PDF
The MJ15003 is a Complementary Silicon Power Transistors.
| Part Number | MJ15003 Datasheet |
|---|---|
| Description | 20 AMPERE POWER TRANSISTORS |
| Manufacturer | Motorola Semiconductor |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ15003/D Complementary Silicon Power Transistors The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio,. ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ Î. |
| Part Number | MJ15003 Datasheet |
|---|---|
| Description | 20A Complementary Power Transistors |
| Manufacturer | Multicomp |
| Overview |
MJ15003, MJ15004
20A Complementary Power Transistors
The MJ15003 and MJ15004 are power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulat.
* High Power Dissipation PD = 250W (TC = 25°C) * High DC current Gain and Low Saturation Voltage hFE = 25 (Minimum) at IC = 5.0A, VCE = 2.0V. * For Low Distortion Complementary designs. Pin 1. Base 2. Emitter Collector(Case) Maximum Ratings Dimensions Minimum Maximum A 38.75 39.96 B 19.28 2. |
| Part Number | MJ15003 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High DC Current Gain- : hFE= 25(Min)@IC= 5A ·Wide Area of Safe Operation ·Complement to the PNP MJ15004 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO. ETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 2V ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 140V. |