MJ15011 Datasheet and Specifications PDF

The MJ15011 is a 10 AMPERE COMPLEMENTARY POWER TRANSISTORS.

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Part NumberMJ15011 Datasheet
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ15011/D Advance Information Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed . ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ .
Part NumberMJ15011 Datasheet
DescriptionCOMPLEMENTARY POWER TRANSISTORS
Manufactureronsemi
Overview MJ15011 (NPN), MJ15012 (PNP) Preferred Devices Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed for high−power audio, disk. Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range Symbol VCEO VCEX VEB IC ICM IB IBM IE IEM PD TJ, Tstg Value 250 250 5 10 15 2 5 12 20 200 1.14
* 65 to + 200 Unit Vdc Vdc Vdc Adc Adc Adc Watts W/_C _C TO
*204AA (TO
*3) CASE 1
*07 STYLE 1 MARKING DIAGRAM.
Part NumberMJ15011 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 20(Min.)@IC = 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max)@ IC = 4A ·Complement to the PNP MJ15012 ·Minimum Lot-to-Lot variat. rature -65~200 UNIT V V V A A A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case isc website： MAX UNIT 0.875 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless o.