| Part Number | MJ15019 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·With TO-3 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and . r MJ15019 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.0A ,IB= 0.1A VBE(on) Base-Emitter Saturation Voltage IC= -1.0A ,VCE= 4.0V . |
MJ15019 Datasheet and Specifications PDF
The MJ15019 is a PNP Transistor.
| Part Number | MJ15019 Datasheet |
|---|---|
| Description | Power Transistor |
| Manufacturer | DIGITRON |
| Overview |
MJ15018, MJ15020 – NPN MJ15019, MJ15021 - PNP
High-reliability discrete products and engineering services since 1977
COMPLEMENTARY POWER TRANSISTORS
FEATURES • Available as “HR” (high reliability) .
* Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. * Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Characteristic Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Bas. |
| Part Number | MJ15019 Datasheet |
|---|---|
| Description | 4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ15018/D
MJ15015, MJ15016 (See 2N3055A)
Advance Information
Complementary Silicon Power Transistors
. . . designed for use as high fr.
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MAXIMUM RATINGS
Rating Symbol VCEO VCBO VEBO IC IB IE MJ15018 MJ15019 200 200 MJ15020 MJ15021 250 250 Unit Vdc Vdc Vdc Adc Adc Adc Collector *Emitter Voltage Collector *Base Voltage Emitter *Base Vol. |