MJ4031 Datasheet and Specifications PDF

The MJ4031 is a Silicon PNP Darlingtion Power Transistor.

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Part NumberMJ4031 Datasheet
ManufacturerInchange Semiconductor
Overview ·With TO-3 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and . isc Silicon NPN Darlington Power Transistor MJ4031 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA, IB= 0 VCE(sat)1 Collector-Emitter Saturation Voltage IC= -10A ,IB=-40mA VCE(sat)2 Collector.
Part NumberMJ4031 Datasheet
DescriptionBipolar PNP Device
ManufacturerSeme LAB
Overview MJ4031 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. s and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)145.
Part NumberMJ4031 Datasheet
Description(MJ4030 - MJ4032) MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS
ManufacturerComset Semiconductors
Overview PNP MJ4030 – MJ4031 – MJ4032 MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS They are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 m. PNP MJ4030
* MJ4031
* MJ4032 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO Ratings Collector-Emitter Voltage (*) Collector Cutoff Current Test Condition(s) IC=-100 mA, IB=0 VCE=-30 Vdc, IB=0 VCE=-40 Vdc, IB=0 VCE=-50 V, IB=0 VBE=-5.0 V, IC=0 V.
Part NumberMJ4031 Datasheet
DescriptionPower Transistor
ManufacturerMotorola Semiconductor
Overview . .