| Part Number | MJD5731 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -350V(Min) ·High Switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for li. or MJD5731 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V (BR)CEO Collector-Emitter Breakdown Voltage IC=-30mA, IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -1A ; VCE= -10V MIN -350 . |
MJD5731 Datasheet
The MJD5731 is a Silicon PNP Power Transistor.
| Part Number | MJD5731 |
|---|---|
| Description | High Voltage PNP Silicon Power Transistors |
| Manufacturer | onsemi |
| Overview |
MJD5731
High Voltage PNP Silicon Power Transistors
Designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications.
Features
• PNP Complements to t.
* PNP Complements to the MJD47 thru MJD50 Series * Epoxy Meets UL 94 V *0 @ 0.125 in * These Devices are Pb *Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector *Emitter Voltage Emitter *Base Voltage Collector Current * Continuous Collector Current * Peak Total Power Dissipation @ TC = 25°C D. |