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MJE13007 Datasheet

The MJE13007 is a NPN Silicon Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberMJE13007
ManufacturerFairchild Semiconductor
Overview MJE13006/13007 MJE13006/13007 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Tr. = 2A IC = 2A, IB = 0.4A IC = 5A, IB = 1A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL = 50Ω 4 1.6 3 0.7 110 8 5 Min. 300 400 1 60 30 1 2 3 1.2 1.6 V V V V V pF MHz µs µs µs Typ. Max. Units V V mA IEBO hFE VCE(sat) VBE (sat) Cob fT tON tSTG tF *Base-Emitter Sa.
Part NumberMJE13007
DescriptionTRIPLE DIFFUSED NPN TRANSISTOR
ManufacturerKEC
Overview SEMICONDUCTOR TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times : ton=1.6 S(Max.), tf=0.7 S. Excellent Switching Times : ton=1.6 S(Max.), tf=0.7 S(Max.), at IC=5A High Collector Voltage : VCBO=700V. MJE13007 TRIPLE DIFFUSED NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO Emitter-Base Voltage VEBO Collector Curr.
Part NumberMJE13007
DescriptionSILICON NPN SWITCHING TRANSISTOR
ManufacturerSTMicroelectronics
Overview The MJE13007 is a silicon multiepitaxial mesa NPN power transistor mounted in Jedec TO-220 plastic package. It is are inteded for use in motor control, switching regulators etc. 3 1 2 TO-220 INTER. o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEV I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = rated V CEV V CE = rated V CEV V EB = 9 V I C = 10 mA IC IC IC IC = = = = 2 5 8 5 A A A A IB.
Part NumberMJE13007
DescriptionSilicon NPN Transistor
ManufacturerNTE Electronics
Overview The MJE13007 is a silicon NPN transistor in a TO−220 type package designed for high−voltage, high− speed power switching inductive circuits where fall time is critical. This device is particularly su. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Base .

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