MJE171 Datasheet and Specifications PDF

The MJE171 is a POWER TRANSISTOR.

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Part NumberMJE171 Datasheet
ManufacturerCentral Semiconductor
Overview 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 . .
Part NumberMJE171 Datasheet
DescriptionComplementary Plastic Silicon Power Transistors
Manufactureronsemi
Overview MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio .
* Collector
*Emitter Sustaining Voltage
* VCEO(sus) = 40 Vdc
* MJE170, MJE180 = 60 Vdc
* MJE171, MJE181 = 80 Vdc
* MJE172, MJE182 DC Current Gain
* hFE = 30 (Min) @ IC = 0.5 Adc = 12 (Min) @ IC = 1.5 Adc Current
*Gain
* Bandwidth Product
* fT = 50 MHz (Min) @ IC = 100 mAdc Annular C.
Part NumberMJE171 Datasheet
DescriptionPNP Transistor
ManufacturerSeCoS Halbleitertechnologie GmbH
Overview Elektronische Bauelemente MJE170 / MJE171 / MJE172 PNP General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-126 FEATURES  Low frequency amplifier .
* Low frequency amplifier
* Low current
* High speed switching applications ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) Parameter Symbol Ratings MJE170 -60 Collector - Base Voltage MJE171 MJE172 VCBO -80 -100 MJE170 -40 Collector - Emitter Voltage MJE171 MJE172 VCE.
Part NumberMJE171 Datasheet
DescriptionPNP Epitaxial Silicon Transistor
ManufacturerFairchild Semiconductor
Overview MJE170/171/172 MJE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications 1 TO-126 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C. -0.1 50 30 12 250 Max. Units V V V µA µA µA mA mA mA µA ICBO VCB = - 60V, IB = 0 VCB = - 80V, IE = 0 VCB = - 100V, IE = 0 VCB = - 60V, IE = 0, @TC = 150°C VCB = - 80V, IE = 0, @TC = 150°C VCB = - 100V, IE = 0, @TC = 150°C VBE = - 7V, IC = 0 VCE = - 1V, IC = - 100mA VCE = - 1V, IC = - 500mA VCE = -.