MJE4352 Datasheet and Specifications PDF

The MJE4352 is a (MJE4350 - MJE4353) SILICON POWER TRANSISTOR.

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Part NumberMJE4352 Datasheet
ManufacturerSavantIC
Overview ·With TO-3PN package ·Respectively complement to type MJE4340/4341/4342/4343 ·DC current gain hFE=8(Min)@IC=16A APPLICATIONS ·For use in high power audio amplifier and switching re. Thermal resistance junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER MJE4350 MJE4351 IC=-100mA ;IB=0 MJE4352 MJE4353 VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE Collector-emitter saturation.
Part NumberMJE4352 Datasheet
Description16 AMPERE POWER TRANSISTORS
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE4342/D High-Voltage Ċ High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switc. ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ.
Part NumberMJE4352 Datasheet
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min)- MJE4350 = -120V(Min)- MJE4351 = -140V(Min)- MJE4352 = -160V(Min)- MJE4353 ·Low Saturation Voltage ·Complement to the NPN MJE4340/4341/4. to Case MAX 1.0 UNIT ℃/W isc Website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors MJE4350/4351/4352/4353 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT MJE4350 -100 VCEO(SUS) Collector.