MJE520 Datasheet and Specifications PDF

The MJE520 is a SILICON COMPLEMENTARY POWER TRANSISTORS.

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Part NumberMJE520 Datasheet
ManufacturerCentral Semiconductor
Overview Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 . .
Part NumberMJE520 Datasheet
DescriptionCOMPLEMENTARY MEDIUM POWER TRANSISTOR
ManufacturerSGS-THOMSON
Overview The MJE370 (PNP type) and the MJE520 (NPN type) are silicon epitaxial-base transistors in Jedec TO-126 plastic package, designed for use in gene­ ral purpose amplifier and switching circuits. INTERNA. r Cutoff Current (Ie =0) VCB = 30V < II CD II O hpE* DC Current Gain * Pulsed : pulse duration = 300ps, duty cycle < 1.5%. For PNP types voltage and current values are negativ.
Part NumberMJE520 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·High Collector Current-IC= 3.0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device perform. EBO Emitter-Base Breakdown Vltage VCE(sat) Collector-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain fT Current-Gain
*Bandwidth Product COB Output Capacitance CONDITIONS IC= 100μA ; IE= 0 IC= 100mA IE= 100μA ; IC= 0 IC= 500mA; IB=.