| Part Number | MJE9780 Datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Advance Information
MJE9780 *
*Motorola Preferred Device
PNP Silicon Power Transistor
The MJE9780 is designed for vertical o.
* Standard TO *220AB Package * Gain Range of 50 * 200 at 500 mAdc/10 volts MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Collector *Emitter Sustaining Voltage Collector *Base Voltage Emitter *Base Voltage Collector Current * Continuous Collector Current * Peak Total Power Dissipation (TA = . |
MJE9780 Datasheet and Specifications PDF
The MJE9780 is a PNP SILICON POWER TRANSISTOR.
| Part Number | MJE9780 Datasheet |
|---|---|
| Description | PNP SILICON POWER TRANSISTOR |
| Manufacturer | onsemi |
| Overview |
ON Semiconductort
PNP Silicon Power Transistor
The MJE9780 is designed for vertical output of 14–inch to 17–inch televisions and CRT monitors, as well as other applications requiring a 150 volt PNP t.
* Standard TO *220AB Package * Gain Range of 50 * 200 at 500 mAdc/10 volts MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Collector *Emitter Sustaining Voltage Collector *Base Voltage Emitter *Base Voltage Collector Current * Continuous Collector Current * Peak Total Power Dissipa. |
| Part Number | MJE9780 Datasheet |
|---|---|
| Description | Silicon PNP Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Standard TO–220 Package ·Gain Range of 50 – 200 at 500 mAdc/10 volts ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed forvertical output of . TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA ; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -0.8 V. |