| Part Number | MJF45H11 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview | MJF44H11 (NPN), MJF45H11 (PNP) Preferred Devices Complementary Power Transistors For Isolated Package Applications . . . for general purpose power amplification and switching such as output or driver. Vdc Vdc Adc Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous - Peak Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C Derate above 25°C 10 20 PD 36 1.67 Watts W/°C Watts W/°C °C PD 2.0 0.016 Operating and Storage Junction Temperatu. |
MJF45H11 Datasheet and Specifications PDF
The MJF45H11 is a Complementary Power Transistors.
| Part Number | MJF45H11 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220F package ·Fast switching speeds ·Low collector saturation voltage ·Complement to type MJF44H11 APPLICATIONS ·For general purpose power amplification and switching regulators,converters an. T /W /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current. |
| Part Number | MJF45H11 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -8A ·Fast Switching Speeds ·Complement to Type MJF44H11 ·Minimum Lot-to-Lot variations for robust device performance and reliable operat. c Website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation V. |