| Part Number | MJH11018 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·High DC Current Gain- : hFE = 400(Min)@ IC= 10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 150V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.5V(Max)@ IC= 10A = 4.0V(Max)@ . ion to Case 0.83 ℃/W isc Website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 VCE(sa. |
MJH11018 Datasheet and Specifications PDF
The MJH11018 is a Silicon NPN Power Transistor.
| Part Number | MJH11018 Datasheet |
|---|---|
| Description | 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
| Manufacturer | Motorola Semiconductor |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJH11017/D MJH10012 (See MJ10012) Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifie. ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ. |
| Part Number | MJH11018 Datasheet |
|---|---|
| Description | Complementary Darlington Silicon Power Transistors |
| Manufacturer | onsemi |
| Overview |
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
Complementary Darlington Silicon Power Transistors
These devices are designed for use as general purpose amplifiers, low frequenc.
* High DC Current Gain @ 10 Adc * hFE = 400 Min (All Types) * Collector *Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) * MJH11018, 17 = 200 Vdc (Min) * MJH11020, 19 = 250 Vdc (Min) * MJH11022, 21 * Low Collector *Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC . |