| Part Number | MJH16006 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for hi. .com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.4. |
MJH16006 Datasheet and Specifications PDF
The MJH16006 is a NPN Transistor.
| Part Number | MJH16006 Datasheet |
|---|---|
| Description | POWER TRANSISTORS |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJH16006A/D
Designer's
NPN Silicon Power Transistor
1 kV SWITCHMODE Series
These transistors are designed for high–voltage, high–speed,.
* * * * * * Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits * Collector *Emitter Voltage * VCEV = 1000 Vdc * Fast Turn *Off Times 80 ns Inductive Fall Time * 100_C (Typ) 120 ns Inductive Crossover Time * 100_C (Typ) 800 ns Inductive Storage Time * 100_C (Typ). |
| Part Number | MJH16006 Datasheet |
|---|---|
| Description | POWER TRANSISTORS |
| Manufacturer | onsemi |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJH16006A/D
Designer's
NPN Silicon Power Transistor
1 kV SWITCHMODE Series
These transistors are designed for high–voltage, high–speed,.
* * * * * * Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits * Collector *Emitter Voltage * VCEV = 1000 Vdc * Fast Turn *Off Times 80 ns Inductive Fall Time * 100_C (Typ) 120 ns Inductive Crossover Time * 100_C (Typ) 800 ns Inductive Storage Time * 100_C (Typ). |