MJW1302A Datasheet and Specifications PDF

The MJW1302A is a PNP Silicon Power Bipolar Transistors.

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Part NumberMJW1302A Datasheet
Manufactureronsemi
Overview Complementary NPN-PNP Silicon Power Bipolar Transistors MJW3281A (NPN) MJW1302A (PNP) The MJW3281A and MJW1302A are PowerBase power transistors for high power audio, disk head positioners and other l.
* Designed for 100 W Audio Frequency
* Gain Complementary: Gain Linearity from 100 mA to 7 A hFE = 45 (Min) @ IC = 8 A
* Low Harmonic Distortion
* High Safe Operation Area
* 1 A/100 V @ 1 Second
* High fT
* 30 MHz Typical
* Pb
*Free Packages are Available* MAXIMUM RATINGS (TJ = 25C unless otherwise.
Part NumberMJW1302A Datasheet
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·High DC current amplifier rate hFE: 50-200@VCE= -5V,IC= -1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power audio, disk head positioners . ER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=-100mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A VBE(on) Base-Emitter Saturation Voltage IC=- 8A; VCE=- 5V ICBO Collector Cutoff Current VCB= -230V ; IE=0 IEBO Emitter Cutoff Current VEB= -5V; IC=.